20V to 50V high current ASIC PIN diode driver

ABSTRACT

An apparatus includes a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate a plurality of second signals by a voltage translation of a plurality of first signals. The second circuit may be configured to switch the second signals to generate a plurality of third signals. The second signals are generally switched such that (i) all third signals are inactive before one of the third signals transitions from inactive to active while a switching condition is enabled and (ii) all third signals are switched inactive while the switching condition is disabled. The third circuit may be configured to amplify the third signals to generate a plurality of output signals. Each of the output signals generally has a current capacity to drive one or more of a plurality of diodes in a diode switch circuit.

This application relates to U.S. Ser. No. 14/880,457, filed Oct. 12, 2015, which relates to U.S. Provisional Application No. 62/234,806, filed Sep. 30, 2015, U.S. Provisional Application No. 62/205,217, filed Aug. 14, 2015, and U.S. Pat. No. 9,048,840, issued Jun. 2, 2015, each of which are hereby incorporated by reference in their entirety.

FIELD OF THE INVENTION

The present invention relates to current drivers generally and, more particularly, to a method and/or apparatus for implementing 20V to 50V high current ASIC PIN diode driver.

BACKGROUND OF THE INVENTION

Currently, no fully integrated high voltage p-intrinsic-n (i.e., PIN) diode drivers exist that are capable to both sink and source high currents. High-power wide-band series-shunt PIN diode switches are specified to have low insertion loss to improve efficiency and power handling in a transmission path, and minimize a noise figure in a receive path. The PIN diode drivers supply bias currents to series PIN diodes and sink currents into an output buffer.

Shunt diodes are widely used in the PIN diode switches to improve isolation. For the wide-band switches, working down to several hundreds of megahertz, a DC blocking capacitor between the receive series diode and the shunt diode is not practical because of the physical size. Without the DC blocking capacitor, the back bias voltage used to turn off the receive series diode also directly biases the receive shunt diode in an on-state. For high-power lower-frequency applications, the back voltage can be as high as 50 volts. A high voltage power supply of the PIN diode driver provides the high currents.

To achieve the high sinking/sourcing current criteria for a high voltage PIN diode driver, a typical solution is to use discrete power metal-oxide-silicon field effect transistors (i.e., MOSFETs) as an output buffer, due to high current ratings, and a discrete or integrated gate driver to level-shift digital input controls. A large current limiting resistor with a high power rating is added between the high-side MOSFET and the output to protect the MOSFETs from high transient currents when switching states. The conventional solutions take significant printed circuit board area and are slow in terms of switching speed, typically longer than 1 microsecond.

Conventional full-bridge or half-bridge gate driver integrated circuits are sufficiently fast enough to drive the high power discrete MOSFETs. The conventional drivers have problems driving the PIN diode switches. The drivers include bootstrap capacitors in charge pumps to fully shut down the high side MOSFET. However, the charge in the bootstrap capacitor will discharge over time, thereby preventing the PIN diodes from being in the off-state for a sustained period.

It would be desirable to implement a 20V to 50V high current ASIC PIN diode driver.

SUMMARY OF THE INVENTION

The present invention concerns an apparatus including a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate a plurality of second signals by a voltage translation of a plurality of first signals. The second circuit may be configured to switch the second signals to generate a plurality of third signals. The second signals are generally switched such that (i) all third signals are inactive before one of the third signals transitions from inactive to active while a switching condition is enabled and (ii) all third signals are switched inactive while the switching condition is disabled. The third circuit may be configured to amplify the third signals to generate a plurality of output signals. Each of the output signals generally has a current capacity to drive one or more of a plurality of diodes in a diode switch circuit.

The objects, features and advantages of the present invention include providing a 20 volts (e.g., V) to 50 volts high current application specific integrated circuit (e.g., ASIC) p-intrinsic-N (e.g., PIN) diode driver that may (i) be fully integrated, (ii) achieve a desired current capability without external power MOSFETs, (iii) provide 200-milliampere sinking current for a series diode and 100-milliampere sourcing current for a shunt diode, (iv) drive a typical series/shunt single-pole-double-throw PIN diode switch, (v) be extended to drive switches of any number of poles and throws, (vi) be extended to drive absorptive and/or reflective switches, (vii) be extended to higher voltages as higher voltage processes become available, (viii) include an integrated voltage translator that responds to regular control logic, (ix) be compatible with 3 volt or 5 volt logic, (x) allow a wide back bias voltage range (e.g., from 20 volts to 50 volts), (xi) provide temperature compensation to minimize PIN diode bias current variations over temperature and over the back bias voltage range, (xii) have low quiescent power consumption (e.g., as low as 1 milliampere for 50-volt operation), (xiii) provide fast switching speeds (e.g., less than 300 nanoseconds), (xiv) provide a capability to switch off all of the PIN diodes concurrently, (xv) drive single-pole three-throw switches, (xvi) drive single-pole four-throw switches, (xvii) be implemented as a single integrated circuit for double-throw switches and/or (xviii) be implemented as two integrated circuits for three-throw and four-throw switches.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects, features and advantages of the present invention will be apparent from the following detailed description and the appended claims and drawings in which:

FIG. 1 is a block diagram of a system;

FIG. 2 is a block diagram of a diode driver circuit in accordance with a preferred embodiment of the present invention;

FIG. 3 is a schematic diagram of an input buffer circuit;

FIG. 4 is a schematic diagram of a logic circuit;

FIG. 5 is a schematic diagram of a voltage translator circuit;

FIG. 6 is a schematic diagram of a NAND gate;

FIG. 7 is a schematic diagram of a NOR gate;

FIG. 8 is a block diagram of a bias circuit;

FIG. 9 is a schematic diagram of a diode switch circuit; and

FIG. 10 is a block diagram of another system.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Various embodiments of the present invention generally provide a fully integrated diode driver to drive high power wide band p-intrinsic-n (e.g., PIN) diode switches in a compact package (e.g., a 3-millimeter 16-lead quad flat no-leads package). The diode driver may be capable of sinking large currents and sourcing large currents. The diode driver may also provide high voltage back bias to create suitable isolation among the PIN diodes in high power applications.

Referring to FIG. 1, a block diagram of a system 90 is shown. The system (or apparatus) 90 generally comprises a block (or circuit) 92, a block (or circuit) 94, a block (or circuit) 96, a block (or circuit) 98, a block (or circuit) 99 and a block (or circuit) 100. The circuits 92-100 may be implemented with hardware and/or simulated with software.

The circuit 92 may generate a control signal (e.g., CA) received by circuit 100. The circuit 92 may generate an enable signal (e.g., EN) received by the circuit 100. Another control signal (e.g., CB) may be received by the circuit 100. A driver select signal (e.g., DS) may be received by the circuit 100. The signals CB and DS may be inactive (e.g., grounded) in the system 90. The circuit 100 may generate a signal (e.g., OUTA) received by the circuit 94. A signal (e.g., OUTB) may be generated by the circuit 100 and presented to the circuit 94. A transmit signal (e.g., RF_TX) may be generated by the circuit 96 and presented to the circuit 94. A receive signal (e.g., RF_RX) may be presented by the circuit 94 to the circuit 98. A bidirectional signal (e.g., ANT) may be exchanged between the circuit 94 and the circuit 99.

The circuit 92 may implement a controller circuit. The circuit 92 is generally operational to control a mode (or switching condition) of the circuit 94. The circuit 92 may generate the signal CA in a transmit state to command the circuit 94 into a transmit mode. The signal CA may be generated in a receive state to command the circuit 94 into a receive mode. The circuit 92 may generate the signal EN in an enabled state where the circuit 94 is configured to switch the signal ANT, the signal RF_TX and the signal RF_RX. The circuit 92 may generate the signal EN in a disabled state where the circuit 94 is configured in an all-off state (or mode).

The circuit 94 may implement a diode switch circuit. The circuit 94 is generally operational to switch the high-frequency signals RF_TX, RF_RX and ANT through multiple diodes in either the transmit mode, the receive mode or the all-off mode as determined by the signals OUTA and OUTB. In various embodiments, the signal OUTA may be received at multiple inputs (e.g., TX-SERIES and RX-SHUNT). The signal OUTS may be received at an input (e.g., RX-SERIES). In some embodiments, the diodes may be implemented as PIN diodes and the circuit 94 may be implemented as a PIN diode switch circuit. Other types of diodes may be implemented to meet the design criteria of a particular application.

The circuit 96 may implement a transmitter circuit. The circuit 96 is generally operational to generate data in the transmission signal RF_TX while the system 90 is in the transmit mode.

The circuit 98 may implement a receiver circuit. The circuit 98 is generally operational to receive data in the receive signal RF_RX while the system 90 is in the receiving mode.

The circuit 99 may implement an antenna circuit. While transmitting, the circuit 99 is generally operational to broadcast transmit data generated by the circuit 96, switched by the circuit 94 and received in the signal ANT. While receiving, the circuit 99 is generally operational to accept receive data, and present the receive data in the signal ANT to the circuit 94 for switching to the circuit 98.

The circuit 100 may implement a diode driver circuit. The circuit 100 is generally operational to source current to and sink current from diodes in the circuit 94 in response to the signals CA, CB, EN and DS. In various embodiments, the circuit 100 may be designed to accommodate one or more diodes. Control of the diodes may be achieved by generating the signals OUTA and OUTB.

The circuit 100 may operate in one of multiple modes (e.g., the transmit mode, the receive mode and the all-off mode) at a time as determined by the signals CA, CB, EN and DS. In the transmit mode, the circuit 100 may assert the driver signals OUTA and OUTB such that the signal RF_TX is switched (or routed) to the signal ANT in the circuit 94 and the signal RF_RX is switched (or routed) to a signal ground (or termination). In the receive mode, the circuit 100 may assert the driver signals OUTA and OUTB such that the signal ANT is switched (or routed) to the signal RF_RX and the signal RF_TX is switched (or routed) to the signal ground (or termination). In the all-off mode, the circuit 100 may assert the driver signals OUTA and OUTB such that the signal ANT is isolated from both the signals RF_TX and RF_RX.

Referring to FIG. 2, a block diagram of a circuit 100 is shown in accordance with a preferred embodiment of the present invention. The circuit (or apparatus) 100 generally comprises multiple blocks (or circuits) 110 a-110 d, a block (or circuit) 111, a block (or circuit) 112, a block (or circuit) 114, a block (or circuit) 124 and a block (or circuit) 125. The circuit 112 generally comprises multiple blocks (or circuits) 123 a-123 b. The circuit 124 generally comprises multiple blocks (or circuits) 126 a-126 b and multiple blocks (or circuits) 128 a-128 b. The circuit 125 generally comprises a device (or circuit) 116, a device (or circuit) 118, a device (or circuit) 120 and a device (or circuit) 122. The circuits 110 a-128 b may be implemented with hardware and/or simulated with software. Additional details for the circuit 100 may be found in U.S. Pat. No. 9,048,840, which is hereby incorporated by reference in its entirety.

The signal CA may be received by one of the circuits 110 a-110 d (e.g., 110 d). The signal CB may be received by one of the circuits 110 a-110 d (e.g., 110 c). The signal DS may be received by one of the circuits 110 a-110 d (e.g., 110 b). The signal EN may be received by one of the circuits 110 a-110 d (e.g., 110 a). A signal (e.g., ENI) may be generated by the circuit 110 a and transferred to the circuit 111. The circuit 110 b may generate a signal (e.g., DSI) received by the circuit 111. A signal (e.g., CBI) may be generated by the circuit 110 c and transferred to the circuit 111. The circuit 110 d may generate a signal (e.g., CAI) received by the circuit 111.

The circuit 111 may generate a complementary pair of signals (e.g., A+ and A−) received by the circuit 112 (e.g., the circuit 123 a). A complementary pair of signals (e.g., B+ and B−) may be generated by the circuit 111 and received by the circuit 112 (e.g., the circuit 123 b). The circuit 112 (e.g., the circuit 123 a) may generate an output signal (e.g., PD+) received by the circuit 124 (e.g., the circuit 126 a). The circuit 112 (e.g., the circuit 123 a) may generate an output signal (e.g., ND+) received by the circuit 124 (e.g., the circuit 128 a). The circuit 112 (e.g., the circuit 123 b) may generate another output signal PD+ received by the circuit 124 (e.g., the circuit 126 b). The circuit 112 (e.g., the circuit 123 b) may generate another output signal ND+ received by the circuit 124 (e.g., the circuit 128 b).

A bias signal (e.g., VN) may be generated by the circuit 114 and received by the circuits 112 and 124. A bias signal (e.g., VP) may be generated by the circuit 114 and received by the circuits 112 and 124. The signal OUTA may be generated and presented by the devices 116 and 118. The signal OUTB may be generated and presented by the devices 120 and 122. A power supply signal (e.g., VCC) in a low voltage domain (e.g., 3 volts to 5 volts) may be received by the circuits 110 a-110 d, 111 and 114. Another power supply signal (e.g., VDD) in a high voltage domain (e.g., 20 volts to 50 volts) may be received by the circuits 112, 114, 124 and 125. In various embodiments, the power supply signal VDD may be greater than 50 volts (e.g., up to 250 volts) to meet the design criteria of a particular application.

Each circuit 110 a-110 d may implement an input buffer circuit. The circuits 110 a-110 d are generally operational to square up the signals CA, CB, DS and EN (e.g., single-ended 3 volt or 5 volt logic control signals) and generate the output signals CAI, CBI, DSI and ENI to drive the circuit 111.

The circuit 111 may implement a logic circuit. The logic circuit 111 is generally operational to create the signals A+, A−, B+ and B− by logically switching the signals CAI, CBI, DSI and ENI. In some embodiments, the logical switching may be implemented with Boolean logic gates.

The circuit 112 may implement a multi-signal high voltage translator circuit. The circuit 112 is generally operational to translate the signals A+ and A- and the signal B+ and B− from the power supply signal VCC voltage domain to the pairs of signals PD+ and ND+ in the power supply signal VDD voltage domain.

The circuit 114 may implement a bias circuit. The circuit 114 is generally operational to generate several bias voltages (e.g., in the signals VN and VP) and several bias currents used inside the circuit 100. A bandgap reference circuit in the circuit 114 generally provides temperature compensation for the circuit 100.

The circuits 116, 118, 120 and 122 may implement high current and high voltage power transistors. In various embodiments, each transistor 116-120 may be a power metal-oxide-semiconductor field effect transistor (e.g., MOSFET). The transistors 116 and 118 may form a complementary pair. The transistors 120 and 122 may form another complementary pair.

The transistors 118 and 122 may implement high voltage (e.g., 50 volt or higher) power n-channel MOSFETs. The transistors 118 and 122 generally have a low (e.g., less than 10 ohms) on resistance. The transistors 116 and 120 may implement high voltage (e.g., 50 volt or higher) power p-channel MOSFETs. The transistors 116 and 120 generally have a low (e.g., less than 30 ohms) on resistance.

Each circuit 123 a-123 b may implement may implement an individual high voltage translator circuit. The circuit 123 a is generally operational to translate the signals A+ and A− from the power supply signal VCC voltage domain to the corresponding signals PD+ and ND+ in the power supply signal VDD voltage domain. The circuit 123 b is generally operational to translate the signals B+ and B− from the power supply signal VCC voltage domain to the corresponding signals PD+ and ND+ in the power supply signal VDD voltage domain.

The circuit 124 may implement a logic switch circuit. The circuit 124 is generally operational as a pre-driver for the transistors 116-122 in the circuit 125. The circuit 124 may also be operational to make sure that both the output pull-up transistors and pull-down transistors 116-120 may be inactive (or non-conductive or shut down) before the signals OUTA and/or OUTS change active states. Before a transition of the signal OUTA, the circuit 124 may drive the gates of the transistors 116 and 118 to respective inactive conditions so that both transistors 116 and 118 begin the transition in the inactive (or non-conductive or shut down) state. Before a transition of the signal OUTB, the circuit 124 may drive the gates of the transistors 120 and 122 to respective inactive conditions so that both transistors 120 and 122 begin the transition in the inactive (or non-conductive or shut down) state.

The circuit 125 may implement a driver circuit. The circuit 125 is generally operational to generate multiple (e.g., two) output signals (e.g., the signal OUTA and the signal OUTB) by amplifying intermediate signals received from the circuit 124. The transistors 116-122 of the circuit 125 may provide large sinking currents (e.g., up to 200 milliamperes) and large sourcing currents (e.g., up to 100 milliamperes) to drive the PIN diodes in the circuit 94. In various embodiments, the circuit 125 may sink currents greater than 200 milliamperes (e.g., up to 1000 milliamperes) and/or source currents greater than 100 milliamperes (e.g., up to 500 milliamperes) to meet the design criteria of a particular application. Other current ranges may be implemented to meet the design criteria of other applications.

Each circuit 126 a-126 b may implement a logical NAND gate. The circuit 126 a may receive the signal PD+ from the circuit 123 a and a feedback signal from the circuit 128 a. The transistor 116 may be controlled by the intermediate (or output) signal generated by the circuit 126 a. The circuit 126 b may receive the signal PD+ from the circuit 123 b and a feedback signal from the circuit 128 b. The transistor 120 may be controlled by the intermediate (or output) signal generated by the circuit 126 b.

Each circuit 128 a-128 b may implement a logical NOR gate. The circuit 128 a may receive the signal ND+ from the circuit 123 a and a feedback signal from the circuit 126 a. The transistors 118 may be controlled by the intermediate (or output) signal generated by the circuit 128 a. The circuit 128 b may receive the signal ND+ from the circuit 123 b and a feedback signal from the circuit 126 b. The transistor 122 may be controlled by the intermediate (or output) signal generated by the circuit 128 b.

If the transistor pair 116 and 118 and/or the transistor pair 120 and 122 are not shut down before changing states, the high voltage supply signal VDD may see a low resistance path during the transitions of the transistors. The circuits 126 a and 128 a may be configured to prevent both the transistors 116 and 118 from being active (or conductive) simultaneously while the signal OUTA transitions from a high state to a low state and from the low state to the high state. The circuits 126 b and 128 b may be configured to prevent both the transistors 120 and 122 from being active (or conductive) simultaneously while the signal OUTB transitions from a high state to a low state and from the low state to the high state.

Overall switching operations of the circuit 100 may be provided by a truth table as shown in TABLE I as follows:

TABLE I Inputs Outputs EN (active low) DS CB CA OUTA OUTB 1 (disabled) X X X H H 0 (enabled) 0 0 0 L H 0 0 0 1 H L 0 0 1 0 H H 0 0 1 1 H H 0 1 0 0 H H 0 1 0 1 H H 0 1 1 0 L H 0 1 1 1 H L Where “X” is a don't care condition, “H” is a high voltage, and “L” is a low voltage. The truth table generally uses active low for the signal EN as an example. In some embodiments, the signal EN may be change to an active high. The truth table may also use logic high (H) values in the signals OUTA and OUTB to bias the switches in the circuit 94 to an off (or nonconducting) state as an example. In some embodiments, the signals OUTA and OUTB may be changed to logic low values to bias the switches in the circuit 94 to the off state. Having both signals OUTA and OUTB in the logic high condition may be considered an all-off state for the circuit 94.

TABLE I may be simplified where the circuit 94 implements a single-pole double-throw (SPDT) diode switch circuit (e.g., the signals RF_TX and RF_RX are at the two throw nodes of the switch and the signal ANT is at the pole node of the switch). The control signal CB and the select signal DS may be set to inactive (e.g., a logic low), as shown in FIG. 1, or to active (e.g., a logic high). The switching may be enabled by the circuit 92 setting the signal EN to enabled (e.g., a logic low). With the signal EN enabled, the control signal CA may thus directly control the output states for the signals OUTA and OUTB. A truth table for the simplified condition may be provided in TABLE II as follows:

TABLE II Inputs Outputs EN CA OUTA OUTB 1 X H H 0 0 L H 0 1 H L

In another embodiment, the signal CB may be used to control the all-off state for the circuit 94. The signal EN may be set to the enabled state and the signal DS may be set either high or low. Another truth table that uses the signal CB for the all-off state is generally provided in TABLE III as follows:

TABLE III Inputs Outputs CB CA OUTA OUTB CB = inverse of DS X H H CB = DS 0 L H CB = DS 1 H L

Referring to FIG. 3, a schematic diagram of an example implementation of a circuit 110 is shown. The circuit 100 may be representative of each circuit 110 a-110 d. The circuit 110 generally comprises a block (or circuit) 140, a block (or circuit) 142 and a device (or circuit) 148. The circuits 140-142 and the device 148 may be implemented with hardware and/or simulated with software.

In the example, the circuit 110 may comprise a number of MOSFETs (e.g., M0 to M6). The MOSFETS M0 and M1 may have respective gates, drains and sources connected such that the MOSFETS M0 and M1 and the device (e.g., a resistor) 148 function as an electrostatic discharge (e.g., ESD) protection circuit for an input signal (e.g., INPUT). The signal INPUT may be representative of the signals CA, CB, DS and EN. A gate of the MOSFET M2 may be connected to power supply signal VCC. The MOSFET M2 may actively pull down the signal INPUT to ground potential. The pull down generally prevents the signal INPUT from floating while not actively being driven by the circuit 92.

The MOSFETs M3 and M4 may be connected to form a complementary metal oxide semiconductor (e.g., CMOS) inverter 140. The MOSFETs M5 and M6 may be connected to form a CMOS inverter 142. The CMOS invertors 140 and 142 may be connected between the power supply signal VCC and ground potential. The signal INPUT may be presented to a drain of the MOSFET M0 and a first terminal of the resistor 148. A second terminal of the resistor 148 may be connected to a drain of the MOSFET M1, a drain of the MOSFET M2 and an input of the CMOS inverter 140. An output of the inverter 140 may be connected to an input of the inverter 142. An output of the inverter 142 may present an output signal (e.g., OUTPUT). The signal OUTPUT may be representative of the signals CAI, CBI, DSI and ENI.

Referring to FIG. 4, a schematic diagram of an example implementation of the circuit 111 is shown. The circuit ill generally comprises a block (or circuit) 141, a block (or circuit) 143, a block (or circuit) 145, a block (or circuit) 147 and a block (or circuit) 149. The circuits 141-149 may be implemented with hardware and/or simulated with software.

The signal DSI and the signal ENI may be received by the circuit 141. A signal (e.g., INT) may be generated by the circuit 141 and received by the circuit 143. The circuit 143 may present an inverted version of the signal INT to the circuit 145 and the circuit 149. The circuit 145 may also receive the signals CAI and ENI. The complementary signal A+/A− may be generated by the circuit 145. The circuit 147 may receive the signal CAI. The circuit 149 may receive the inverted version of the signal INT, an inverted version of the circuit CAI and the signal ENI. The complementary signal B+/B− may be generated by the circuit 149.

The circuit 141 may implement a logical exclusive-NOR gate. The circuit 143 may implement an inverter. The circuit 145 may implement a logical OR gate. The circuit 147 may implement an inverter. The circuit 149 may implement a logical OR gate.

Referring to FIG. 5, a schematic diagram of an example implementation of the circuit 112 is shown. The circuit 112 generally comprises a block (or circuit) 150, a block (or circuit) 152, a block (or circuit) 154, a block (or circuit) 156 and a block (or circuit) 158. The circuits 150-158 may be implemented with hardware and/or simulated with software.

The circuit 150 may implement a voltage translator circuit. Each circuit 152, 154, 156 and 158 may implement protection circuitry. In the example, the circuit 112 may comprise a number of MOSFETs (e.g., M11 to M22). The MOSFETS M11 to M18 may form the voltage translator circuit 150 in a high voltage driver. The MOSFETS M13 to M16 may implement high voltage (e.g., 50 volt or higher) MOSFETS for high voltage operation. A bias voltage in the signal VP may be received by the MOSFETS M15 and M16. The bias voltage in the signal VP may be within a specified high voltage (e.g., 20 volts) of the power supply signal VDD to protect the MOSFETS M17 and M18 (e.g., 20 volt field effect transistors). A bias voltage in the signal VN may be received by the MOSFETs M13 and M14. The bias voltage in the signal VN is generally below a specified low voltage (e.g., 20 volts) relative to ground to protect the MOSFETS M11 and M12 (e.g., 20 volt field effect transistors). The MOSFETS M19 to M22 in the circuits 152 to 156, respectively, may implement protection MOSFETs to hold the voltage for gate drive output signals PD+ and ND+ through small leakage currents.

Referring to FIG. 6, a schematic diagram of an example implementation of a circuit 126 is shown. The circuit 126 may represent the circuits 126 a and 126 b. The circuit 126 generally comprises a block (or circuit) 160, a block (or circuit) 162, a block (or circuit) 164 and a block (or circuit) 166. The circuits 160-166 may be implemented with hardware and/or simulated with software.

The circuit 160 may implement a logical NAND gate. The circuit 162 may implement a clamp circuit. The circuit 164 may implement an inverter circuit. The circuit 166 may implement a level shifter circuit. In the example, the circuit 126 may comprise a number of MOSFETs (e.g., M23 to M27).

The MOSFETS M23 to M26 of the circuit 160 may be configured to perform the logical NAND function. The signal PD+ and a signal (e.g., FBN from the circuit 128, see FIG. 7) may be received by the circuit 126. An output signal (e.g., OUT) may be the logical NAND of the signals PD and FBN. A feedback signal (e.g., FBP) may be generated by inverting with the circuit 164 and level shifting with the circuit 166 to generate the signal OUT.

The MOSFET M27 of the circuit 162 may receive a clamping voltage (e.g., VP) at a gate node from the circuit 114. The MOSFET M27 generally clamps the signal OUT to be within a specified voltage (e.g., 15 volts) from the power rails. The clamping generally protects the gates of the output power MOSFETs 116 and 120 (FIG. 2). Even though the drain-to-source breakdown voltage of the MOSFETS 116 and 120 may be high (e.g., above 50 volts), the gate-to-source breakdown voltage may be lower (e.g., only 20 volts). The level shifted signal FBP may be a feedback signal to make sure both output power MOSFETs in each pair of power MOSFETS may be shut down before changing states.

Referring to FIG. 7, a schematic diagram of an example implementation of a circuit 128 is shown. The circuit 128 may represent the circuits 128 a and 128 b. The circuit 128 generally comprises a block (or circuit) 170, a block (or circuit) 172, a block (or circuit) 174 and a block (or circuit) 176. The circuits 170-176 may be implemented with hardware and/or simulated with software.

The circuit 170 may implement a logical NOR gate. The circuit 172 may implement a clamp circuit. The circuit 174 may implement an inverter circuit. The circuit 176 may implement a level shifter circuit. In the example, the circuit 128 may comprise a number of MOSFETs (e.g., M28 to M32).

The MOSFETS M28 to M31 of the circuit 170 may be configured to perform a logical NOR function. The signal ND+ and the signal FBP (from the circuit 126) may be received by the circuit 128. An output signal (e.g., OUT) may be the logical NOR of the signals ND and FBP. The feedback signal FBP may be generated by inverting in the circuit 174 and level shifting in the circuit 176 to generate the signal OUT.

The MOSFET M32 of the circuit 172 may receive a clamping voltage (e.g., VN) at a gate node from the circuit 114. The MOSFET M32 generally clamps the signal OUT to be within a specified voltage (e.g., 15 volts) from the power rails. The clamping generally protects the gates of the output power MOSFETs 118 and 122 (FIG. 2). Even though the drain-to-source breakdown voltage of the MOSFETS 118 and 122 may be high (e.g., above 50 volts), the gate-to-source breakdown voltage may be lower (e.g., only 20 volts). The level shifted signal FBN may be a feedback signal to make sure both output power MOSFETs in each pair of power MOSFETS may be shut down before changing states.

Referring to FIG. 8, a block diagram of an example implementation of the circuit 114 is shown. The circuit 114 generally comprises a block (or circuit) 180, a block (or circuit) 182, a block (or circuit) 184, a block (or circuit) 186 and multiple devices (or circuits) R1-R2. The circuits 180-186 and the device R1-R2 may be implemented with hardware and/or simulated with software.

The circuit 180 may implement a bandgap reference circuit. The circuit 182 may implement an operational amplifier circuit. The circuit 184 may implement a current mirror circuit. In the example, the circuit 184 generally comprises multiple MOSFETs (e.g., M33 and M34). The circuit 186 may implement a level shifter circuit. The circuits R1 and R2 may implement resistors arranged as a voltage divider circuit.

The circuit 180 may be operational to generate a stable reference voltage for use by the operational amplifier circuit 182. The clamping signal (or voltage) VN may be generated by the operational amplifier circuit 182. The signal VN may be a multiple of a reference voltage generated by the bandgap reference circuit 180. The multiplication factor is generally determined by the values of the resistors R1 and R2. The signal VN may be generated in an intermediate voltage domain (e.g., 5 volts to 20 volts) at an intermediate voltage (e.g., around 15 volts) referenced to (e.g., above) ground. The bandgap reference circuit 180 may be designed to have a slightly upward slope versus temperature.

The clamping signal (or voltage) VP may be generated by a chain of diodes (e.g., Da-Dn) in the circuit 186 and the current mirror circuit 184 formed by the MOSFETs M33 and M34. Current through the diodes Da-Dn may be set by an input current signal (e.g., IBIAS) received by the current mirror circuit 184. The signal VP may be generated in the high voltage domain at a high voltage (e.g., around 15 volts) referenced to (e.g., less than) the power supply signal VDD.

Referring to FIG. 9, a schematic diagram of an example common implementation of the circuit 94 is shown. In various embodiments, the circuit 94 may implement a series-shunt single-pole double-throw switch. The circuit 94 generally comprises multiple switching diodes (e.g., TX-SERIES, RX-SERIES and RX-SHUNT) and a capacitor (e.g., C4). Additional resistors (e.g., R1 and R2), additional capacitors (e.g., C1, C2 and C3) and additional inductors (e.g., L1, L2, L3 and L4) may be implemented external to the circuit 94 and coupled to ports of the circuit 94.

The diode TX-SERIES may couple the signal RF_TX with the signal ANT. The diode RX-SERIES may couple the signal RF_RX with the signal ANT. The diode RX-SHUNT may couple the signal RF_RX with the signal OUTA. A series inductor-resistor set (e.g., L1 and R1) may be connected to the signal ANT to bias the diodes within the circuit 94 to a low (e.g., 3.3 volts) voltage. Another series inductor-resistor set (e.g., L2 and R2) may be inline between an input (or port) RX-SHUNT of the circuit 94 and the circuit 100. The inductor L3 may be in series between an input (or port) TX-SERIES of the circuit 94 and the circuit 100. The inductor L4 may be in series between an input (or port) RX-SERIES of the circuit 94 and the circuit 100. The capacitor C1 may be used as a DC block between the low voltage and the antenna 99. The capacitor C2 may be used as a DC block between the signal RF_TX and the inductor L3/signal OUTA. The capacitor C3 may be used as a DC block between the signal RF_RX and the inductor L4/signal OUTB. The capacitor C4 may be connected between the input RX-SHUNT and ground. In embodiments where the circuit 94 implements a series-shunt series-shunt single-pole double-throw switch (e.g., a diode TX-SHUNT is included), and an input (or port) TX-SHUNT may be connected to the input RX-SERIES.

Referring to FIG. 10, a block diagram of another system 90 a is shown. The system 90 a may be a variation of the system 90. The system (or apparatus) 90 a generally comprises a block (or circuit) 92 a, a block (or circuit) 94 a, multiple blocks (or circuits) 97 a-97 d and multiple blocks (or circuits) 100 a-100 b. The circuits 92 a-100 b may be implemented with hardware and/or simulated with software.

The circuit 92 a may generate the signals CA, CB and EN received by each circuit 100 a-100 b. A driver select signal (e.g., DSA) may be in a fixed state (e.g., grounded or a logic low) and received by the circuit 100 a. Another driver select signal (e.g., DSB) may be in another fixed state (e.g., tied to power or a logic high) and received by the circuit 100 b.

The circuit 100 a may present the signals OUTA and OUTB to the circuit 94 a. The circuit 100 b may present a signal (e.g., OUTC) and a signal (e.g., OUTD) to the circuit 94 a. Generation of the signal OUTC may be similar to the generation of the signal OUTA. Generation of the signal OUTD may be similar to the generation of the signal OUTB.

A radio-frequency signal (e.g., RFA) may be exchanged between the circuit 97 a and the circuit 94 a. A radio-frequency signal (e.g., RFB) may be exchanged between the circuit 97 b and the circuit 94 a. The circuit 94 a may exchange a radio-frequency signal (e.g., RFC) with the circuit 97 c. A radio-frequency signal (e.g., RFD) may be exchanged between the circuit 94 a and the circuit 97 d. A signal (e.g., COMMON) may be presented and/or received by the circuit 94 a.

The circuit 92 a may implement a controller circuit. The circuit 92 a may be a variation of the circuit 92. The circuit 92 a is generally operational to control a mode (or switching condition) of the circuit 94 a. The circuit 92 a may generate the signals CA and CB to command the circuit 94 a into a variety of modes. The circuit 92 a may generate the signal EN in the enabled state where the circuit 94 a is configured to switch the signals COMMON, RFA, RFB, RFC and RFD. The circuit 92 a may generate the signal EN in the disabled state to command the circuit 94 a into the all-off state.

The circuit 94 a may implement a diode switch circuit. The circuit 94 a may be a variation of the circuit 94. In various embodiments, the circuit 94 a may be a single-pole three-throw (SP3T) diode switch circuit. In some embodiments, the circuit 94 a may be a single-pole four-throw (SP4T) diode switch circuit. The circuit 94 a is generally operational to switch the high-frequency signals RFA, RFB, RFC, RFD (e.g., the four throw nodes of the switch) to/from the high-frequency signal COMMON (e.g., the pole node of the switch) through multiple diodes in the various modes as determined by the signals OUTA, OUTB, OUTC and OUTD. In some embodiments, the diodes may be implemented as PIN diodes and the circuit 94 a may be implemented as a PIN diode switch circuit. Other types of diodes may be implemented to meet the design criteria of a particular application.

Each circuit 97 a-97 d may implement a radio-frequency circuit. The circuits 97 a-97 d are generally operational to receive and/or generate data in the signals RFA, RFB, RFC and RFD, respectively. In some embodiments, one or more of the circuits 97 a-97 d may implement a transmitter circuit, similar to the circuit 96, and the signal COMMON may be the signal ANT. In various embodiments, one or more of the circuits 97 a-97 d may implement a receiver circuit, similar to the circuit 98, and the signal COMMON may be the signal ANT. In other embodiments, one or more of the circuits 97 a-97 d may implement a filter circuit. In embodiments where the circuit 94 a is implemented as a single-pole three-throw diode switch circuit, the circuit 97 d may be eliminated.

Each circuit 100 a-100 b may implement a diode driver circuit. Each circuit 100 a-100 b may be a copy of the circuit 100. In various embodiments, the circuits 100 a-100 b may be designed to control one or more diodes. The circuit 100 a is generally operational to source current to and sink current from diodes in the circuit 94 a using the signals OUTA and OUTB in response to the signals CA, CB, EN and DSA. The additional circuit 100 b is generally operational to source current to and sink current from diodes in the circuit 94 a using the signals OUTC and OUTD in response to the signals CA, CB, EN and DSB. In various embodiments, both the circuit 100 a and the circuit 100 b may be fabricated in the same integrated circuit. In some embodiments, each circuit 100 a and 100 b may be fabricated as separate integrated circuits.

Overall switching operations of the circuits 100 a-100 b may be provided by a truth table as shown in TABLE IV as follows:

TABLE IV Outputs Inputs Driver A Driver B EN (active low) DS CB CA OUTA OUTB OUTC OUTD 1 (disabled) X X X H H H H 0 (enabled) 0 0 0 L H H H 0 0 0 1 H L H H 0 0 1 0 H H H H 0 0 1 1 H H H H 0 1 0 0 H H H H 0 1 0 1 H H H H 0 1 1 0 H H L H 0 1 1 1 H H H L Where “X” is a don't care condition′ “H” is a high voltage, and “L” is a low voltage. The truth table generally uses active low for the signal EN as an example. In some embodiments, the signal EN may be change to an active high. The truth table may also use logic high (H) values in the signals OUTA, OUTB, OUTC and OUTD to bias the switches in the circuit 94 a to an off (or nonconducting) state as an example. In some embodiments, the signals OUTA, OUTB, OUTC and OUTD may be changed to logic low values to bias the switches in the circuit 94 a to the off state. Having all signals OUTA, OUTB, OUTC and OUTD in the logic high condition may command the all-off state for the circuit 94 a.

TABLE IV may be simplified in embodiments where the driver select signals DSA and DSB are fixed. In various embodiments, the driver select signal DSA may be fixed low (e.g., 0) and the driver select signal DSB may be fixed high (e.g., 1). Each signal EN, CA and CB may be presented to both circuits 100 a-100 b. The signals EN, CA and CB may provide control of the circuit 94 a according to the simplified truth table presented in TABLE V as follows:

TABLE V Outputs Inputs Driver A Driver B EN CB CA OUTA OUTB OUTC OUTD 1 X X H H H H 0 0 0 L H H H 0 0 1 H L H H 0 1 0 H H L H 0 1 1 H H H L

TABLE V may be even further simplified where the all-off state is not implemented. The enable signal EN may be in the enabled state (e.g., set to 0). The driver select signal DSA for the circuit 100 a may be set low (e.g., 0). The driver select signal DSB for the circuit 100 b may be set high (e.g., 1). Each signal CA and CB may be presented to both circuits 100 a-100 b. The control signals CA and CB may control the output states for the signals OUTA, OUTB, OUTC and OUTD. A truth table for the simplified condition may be provided in TABLE VI as follows:

TABLE VI Outputs Inputs Driver A Driver B CB CA OUTA OUTB OUTC OUTD 0 0 L H H H 0 1 H L H H 1 0 H H L H 1 1 H H H L

Embodiments of the present invention generally provide a high voltage PIN diode driver integrated circuit with multiple features. The apparatus may be fully integrated as a single integrated circuit (or chip or die). The apparatus may provide 200 milliamperes or greater sinking current and 100 milliamperes or greater sourcing current to drive a single-pole double-throw PIN diode switch. A fully integrated voltage translator in the apparatus may allow control in a regular logic voltage domain. The control may be compatible to both 3 volt logic and 5 volt logic. A bandgap reference circuit in the apparatus biasing circuit generally provides temperature compensation. The temperature compensation may minimize PIN diode bias current variations over temperature and over the back bias voltage range (e.g., from 20 volts to 50 volts). The apparatus may consume a low quiescent current power consumption (e.g., as low as 1 milliampere) for 50 volt operation. The apparatus may provide fast switching speeds (e.g., less than 300 nanoseconds) to the PIN diode switch. The apparatus may be extended to drive switches of any number of poles and throws. The apparatus may be extended to drive absorptive, as well as reflective switches. By using a higher voltage process, the apparatus may be extended to higher voltages (as long as a process is available).

The functions and structures illustrated in the diagrams of FIGS. 1-10 may be designed, modeled and simulated using one or more of a conventional general purpose processor, digital computer, microprocessor, microcontroller and/or similar computational machines, programmed according to the teachings of the present specification, as will be apparent to those skilled in the relevant art(s). Appropriate software, firmware, coding, routines, instructions, opcodes, microcode, and/or program modules may readily be prepared by skilled programmers based on the teachings of the present disclosure, as will also be apparent to those skilled in the relevant art(s). The software is generally embodied in a medium or several media, for example a non-transitory storage media, and may be executed by one or more of the processors. As used herein, the term “simultaneously” is meant to describe events that share some common time period but the term is not meant to be limited to events that begin at the same point in time, end at the same point in time, or have the same duration.

While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the scope of the invention. 

The invention claimed is:
 1. An apparatus comprising: a first circuit configured to generate a plurality of second signals by a voltage translation of a plurality of first signals; a second circuit configured to switch said second signals to generate a plurality of third signals, wherein said second signals are switched such that (i) all of said third signals are inactive before one of said third signals transitions from inactive to active while a switching condition is enabled and (ii) all of said third signals are switched inactive while said switching condition is disabled; and a third circuit configured to amplify said third signals to generate a plurality of output signals, wherein each of said output signals has a current capacity to drive one or more of a plurality of diodes in a diode switch circuit.
 2. The apparatus according to claim 1, wherein (i) said diodes are PIN diodes with a back bias voltage of at least 20 volts, (ii) said diode switch circuit is a PIN diode switch circuit, (iii) said current capacity sinks up to 200 milliamperes and (iv) said current capacity sources up to 100 milliamperes.
 3. The apparatus according to claim 1, further comprising a fourth circuit configured to generate said first signals in response to a plurality of control signals, an enable signal and a select signal.
 4. The apparatus according to claim 3, wherein said switching condition is enabled while said enable signal is active.
 5. The apparatus according to claim 3, wherein said switching condition is enabled while said select signal is active and at least one of said control signals is inactive.
 6. The apparatus according to claim 3, wherein said switching condition is enabled while said select signal is inactive and at least one of said control signals is active.
 7. The apparatus according to claim 3, wherein said first circuit, said second circuit, said third circuit and said fourth circuit form part of a driver circuit, said apparatus further comprises an additional driver circuit configured to generate a plurality of additional output signals having said current capacity to drive said one or more diodes in said diode switch circuit.
 8. The apparatus according to claim 7, wherein said driver circuit and said additional driver circuit are configured to control said diode switch circuit in response to said control signals and said enable signal.
 9. The apparatus according to claim 8, wherein said diode switch circuit comprises one of (i) a single-pole three-throw diode switch circuit or (ii) a single-pole four-throw diode switch circuit.
 10. The apparatus according to claim 1, wherein said first circuit, said second circuit and said third circuit are implemented in an application specific integrated circuit.
 11. A method for driving a plurality of diodes, comprising the steps of: generating a plurality of second signals by a voltage translation of a plurality of first signals in a circuit; switching said second signals to generate a plurality of third signals, wherein said second signals are switched such that (i) all of said third signals are inactive before one of said third signals transitions from inactive to active while a switching condition is enabled and (ii) all of said third signals are switched inactive while said switching condition is disabled; and amplifying said third signals to generate a plurality of output signals, wherein each of said output signals has a current capacity to drive one or more of said diodes in a diode switch circuit.
 12. The method according to claim 11, wherein (i) said diodes are PIN diodes with a back bias voltage of at least 20 volts, (ii) said diode switch circuit is a PIN diode switch circuit, (iii) said current capacity sinks up to 200 milliamperes and (iv) said current capacity sources up to 100 milliamperes.
 13. The method according to claim 11, further comprising the step of: generating said first signals in response to a plurality of control signals, an enable signal and a select signal.
 14. The method according to claim 13, wherein said switching condition is enabled while said enable signal is active.
 15. The method according to claim 13, wherein said switching condition is enabled while said select signal is active and at least one of said control signals is inactive.
 16. The method according to claim 13, wherein said switching condition is enabled while said select signal is inactive and at least one of said control signals is active.
 17. The method according to claim 13, wherein said output signals are generated using a driver circuit, said method further comprising: generating a plurality of additional output signals having said current capacity to drive said one or more diodes in said diode switch circuit using an additional driver circuit.
 18. The method according to claim 17, further comprising the step of: controlling said diode switch circuit using said driver circuit and said additional driver circuit in response to said control signals and said enable signal, wherein said diode switch circuit comprises one of (i) a single-pole three-throw diode switch circuit or (ii) a single-pole four-throw diode switch circuit. 